Thermoelectric Materials Research Articles

DEVELOPMENT OF HIGH-PERFORMANCE THERMOELECTRIC POLYMERS VIA DOPING OR DEDOPING ENGINEERING.

It is of great significance to develop high-performance thermoelectric (TE) materials, because they can be used to harvest waste heat into electricity and there is abundant waste heat on earth. The conventional TE materials are inorganic semimetals or semiconductors like Bi2Te3 and its derivatives. However, they have problems of high cost, scare/toxic elements, high thermal conductivity, and poor mechanical flexibility. Organic TE materials emerged as the next-generation TE materials because of their merits including solution processability, low cost, abundant element, low intrinsic thermal conductivity, and high mechanical flexibility. Organic TE materials are mainly conducting polymers because of their high conductivity. Both the conductivity and Seebeck coefficient depend on the doping level, and they are interdependent. Hence, the TE properties of polymers can be improved through doping/dedoping engineering. There are three types of doping forms, oxidative (or reductive) doping, protonic acid doping, and charge transfer doping. Accordingly, they can be dedoped by different approaches. In this article, we review the methods to dope and dedope p-type and n-type TE polymers and the combination of doping and dedoping to optimize their TE properties. Secondary doping is also covered, since it can significantly enhance the conductivity of some TE polymers.

Highly conductive triple network hydrogel thermoelectrochemical cells with low-grade heat harvesting

Quasi-solid thermoelectrochemical cells (TECs) are promising candidates for wearable energy harvesting devices as they enable the continuous conversion of low-grade heat into electricity. However, the TEC performance remains limited by inadequate ionic conductivity. Herein, a triple-network hydrogel consisting of polyacrylamide/poly(vinyl alcohol)/cellulose nanofiber (PAAM/PVA/CNF) is synthesized via a freeze-thaw method, and soaked in the thermogalvanic redox couple Fe(CN)63−/4– as the electrolyte. By optimizing the polymer composition and soaking time, a superior ionic conductivity of 168 mS cm−1 is achieved while maintaining a thermopower of ∼1.69 mV K−1. The high ionic conductivity is provided by the fractal microstructure of the hydrogel, as revealed by small-angle X-ray scattering (SAXS). Moreover, the as-fabricated thermoelectric generator array exhibits an exceptional power output of 28.7 μW at a temperature difference of 11.9 K. This work provides insights on the development of wearable thermoelectric materials for practical and reliable energy harvesting applications.

High-Performance W-Doped Bi0.5Sb1.5Te3 Flexible Thermoelectric Films and Generators.

Bi-Sb-Te-based thermoelectric materials have the best room-temperature thermoelectric properties, but their inherent brittleness and rigidity limit their application in the wearable field. In this study, W-doped p-type Bi0.5Sb1.5Te3 (W-BST) thin films were prepared using magnetron sputtering on polyimide substrates to create thermoelectric generators (TEGs). Bending tests showed that the thin film has excellent flexibility and mechanical durability, meeting the flexible requirements of wearable devices. W doping can significantly increase the carrier concentration, Seebeck coefficient, and electrical conductivity of BST thin films. At 300 K, the power factor of the W-BST film is 2.25 times higher than that of the undoped film, reaching 13.75 μW cm-1 K-2. First-principles calculations showed that W doping introduces significant impurity peaks in the bandgap, in which W d electrons remarkably hybridize with the Sb and Te p electrons, leading to an improved electrical conductivity of BST films. Furthermore, W doping significantly reduces the work function of BST films, thereby improving the carrier mobility. A TEG module fabricated from four layers of W-BST thin films achieved a maximum output power density of 6.91 mW cm-2 at a temperature difference of 60 K. Application tests showed that the flexible TEG module could power a portable clock using the temperature difference between body temperature and room temperature. At a medium temperature of 439 K, the assembled TEG module can provide a stable output voltage of 1.51 V to power a LED. This study demonstrates the feasibility of combining inorganic thermoelectric materials with flexible substrates to create high-performance flexible TEGs.

Wenzhou TE: A First-Principle-Calculated Thermoelectric Materials Database

Since the implementation of the Materials Genome Project by the Obama administration in the United States, the development of various computational materials’ databases has fundamentally expanded the choice of industries such as materials and energy. In the field of thermoelectric materials, the thermoelectric figure of merit (ZT) quantifies the performance of the material. From the viewpoint of calculations for vast materials, the ZT values are not easily obtained due to their computational complexity. Here, we show how to build a database of thermoelectric materials based on first-principle calculations for the electronic and heat transport of materials. Firstly, the initial structures are classified according to the values of bandgap and other basic properties using the clustering algorithm K-means in machine learning, and high-throughput first principle calculations are carried out for narrow-bandgap semiconductors which exhibit a potential thermoelectric application. The present framework of calculations mainly includes a deformation potential module, an electrical transport performance module, a mechanical and a thermodynamic properties module. We have also set up a search webpage for the calculated database of thermoelectric materials, providing search facilities and the ability to view the related physical properties of materials. Our work may inspire the construction of more computational databases of first-principle thermoelectric materials and accelerate research progress in the field of thermoelectrics.

Largely Enhanced Thermoelectric Performance of Flexible Ag2Se Film by Cationic Doping and Dual-Phase Engineering.

Recent studies have shown that silver selenide is a promising thermoelectric material at room temperature. Herein, flexible films with a nominal composition of (Ag1-xCux)2Se are prepared by a simple and efficient one-pot method combined with vacuum-assisted filtration and hot pressing. The thermoelectric properties of the films are regulated by both cationic doping and a dual-phase strategy via a wet chemical method. As the x increases, not only Cu is doped into the Ag2Se, but different new phases (CuAgSe and/or CuSe2) also appear. The (Ag1-xCux)2Se film with x = 0.02 composed of Cu-doped Ag2Se and CuAgSe shows a high PF of ∼2540 μW m-1 K-2 (ZT ∼ 0.90) and outstanding flexibility at room temperature. The high thermoelectric properties of the film are due to the effect of Cu doping and the CuAgSe phase, including the increase in electrical conductivity caused by doping, the enhanced phonon scattering at the Ag2Se/CuAgSe interface, and the interaction between the energy filtering effect and the doping effect. In addition to the high output performance (PDmax = 28.08 W m-2, ΔT = 32.2 K), the flexible device assembled with the (Ag0.98Cu0.02)2Se film also has potential applications as a temperature sensor.

Enhancement of Phase Stability and Thermoelectric Performance of Meta‐Stable AgSbTe2 by Thermal Cycling Process

AbstractThermoelectric materials are crucial components in thermoelectric devices employed for environmentally friendly solid‐state cooling and waste heat recovery, demanding not only high performance but also superior thermal or phase stability. The high‐performance thermoelectric material AgSbTe2 encounters challenges when utilized in thermoelectric modules due to the precipitation of Ag2Te, resulting in both thermally unstable characteristics and diminished performance. In this study, a thermal cycling process is employed to enhance the thermal stability and thermoelectric performance of AgSbTe2. Through thermal cycling, secondary phases of AgSbTe2 are made uniform, and the undesired Ag2Te is substituted with Sb2Te3 using an optimized thermal cycling process. As a result, the thermal stability of AgSbTe2 is enhanced due to its meta‐stable state, with <5% variance in thermoelectric figure of merit (ZT) measurements, and the ZT value is raised from 0.8 to 1.7 at 643 K through the optimized thermal cycling. The findings indicate that thermal cycling is an effective strategy for enhancing the thermal stability and thermoelectric performance of AgSbTe2, presenting a novel approach for achieving uniform secondary phases in materials with phase separation or phase change characteristics.

GaInX3(X = S; Se; Te): ultra-low thermal conductivity and excellent thermoelectric performance

Abstract Seeking intrinsically low thermal conductivity materials is a viable strategy in the pursuit of high-performance thermoelectric materials. Here, by using first-principles calculations and semiclassical Boltzmann transport theory, we systemically investigate the carrier transport and thermoelectric properties of monolayer Janus GaInX3 (X = S; Se; Te). It is found that the lattice thermal conductivities can reach values as low as 3.07 Wm−1K−1, 1.16 Wm−1K−1 and 0.57 Wm−1K−1 for GaInS3, GaInSe3, and GaInTe3, respectively, at room temperature. These notably low thermal conductivity is attributed to strong acoustic-optical phonon coupling caused by the presence of low-frequency optical phonons in GaInX3 materials. Furthermore, by integrating the characteristics of electronic and thermal transport, the dimensionless figure of merit ZT can reach maximum values of 0.95, 2.37, and 3.00 for GaInS3, GaInSe3, and GaInTe3, respectively. Our results suggest monolayer Janus GaInX3 (X = S; Se; Te) are promising candidates for thermoelectric and heat management applications.

Hierarchically porous Ca3Co4O9 ceramics prepared by freeze casting: Emerging ultra‐low thermal conductivity and apparent anisotropy

AbstractThe freeze‐casting method shows great potential for environmentally friendly and industrial scale‐up application in thermoelectric materials due to low cost, low toxicity, and pore control. The porous Ca3Co4O9 ceramics with anisotropic thermoelectric performance were fabricated by the freeze‐casting method. High porosities, hierarchical pores, and three‐dimensional (3D) networks significantly contributed to the suppressed thermal conductivity. An ultralow total thermal conductivity of 0.21 W/(m·K) was obtained. The optimized freeze‐casting conditions gave rise to a Seebeck coefficient of 232.3 µV/K. In addition, the ZT value of 0.39 was obtained at 800°C due to the manipulation of hierarchically connected pores and small portions of isolated hexagonal pores. This work provides a new route to form the 3D pores network in oxide thermoelectric ceramics, leading to a decrease in thermal conductivity and optimized thermoelectric performance parallel to the freeze‐casting direction.

Design and optimization of three segmented thermoelectric generator for nuclear reactor application

With the scientific exploration in deep space and deep sea, traditional fossil energy and solar energy cannot supply energy for deep space aircrafts and deep sea vehicles continuously, new energy power systems with the features of long endurance, high reliability and high energy density are imperative. Small nuclear reactor has become one of the best solutions for deep space energy demand in the future due to its strong environmental adaptability and long-life time. To improve the reliability of the static heat pipe reactor, the thermoelectric generators (TEGs) are utilized to convert fission heat into electrical energy. Focusing on the demands of improving the conversion efficiency, a new three segmented TEG is proposed based on the Bi2Te3, CoSb3 and Half-Heusler thermoelectric materials in this paper. Combined with the application requirements of heat pipe reactor, the geometric configuration such as different heights and the cross-sectional area of the three different materials in the PN legs is designed and optimized under different heat flux boundary conditions. The influences of contact electrical resistance and contact thermal resistance on the conversion efficiency have been investigated. When the contact electrical resistivity increases from 0.01 μΩ cm2 to 1000 μΩ cm2, the conversion efficiency loss increases from 2.6% to 80.1%. As the surface roughness rises from 0.1 μm to 100 μm, the conversion efficiency loss increases from 0.9% to 42.7%. Based on the heat flux boundary conditions provided by the heat pipes, the thermoelectric conversion performances of three segmented TEG under different external loads are investigated. Through the geometric optimization of the three segmented TEG with total height 20 mm, the thermoelectric conversion efficiency improves from 6.9% to 15.34%. For the simulation heat flux density conditions of 70 kW m−2, 75 kW m−2, 80 kW m−2, 85 kW m−2 and 90 kW m−2, the maximum output power of a thermoelectric generator can reach 8.56W, 9.71W, 10.85W, 12.00W, and 13.11W, respectively. The output characteristics of the three segmented TEGs meet the design demands of the static conversion system.

Large Transverse Thermoelectric Power Factor in Topological Semimetal NbAs2

AbstractThe distinctive properties of topological semimetals, including linear band dispersion and compensated electron‐hole carriers, have positioned these materials at the forefront of research in power generation and solid‐state cooling due to their remarkable magneto‐thermoelectric performance. In this work, the transverse thermoelectric characteristics of the topological semimetal NbAs2 are studied. Specifically, under a magnetic field of 9 T, the Nernst coefficient displays a linear and unsaturated trend, reaching a peak of 600 µV K−1 at 35 K. Consequently, this engenders a substantial transverse power factor (tPF) of 850 µW cm−1 K−2 under a 5 T magnetic field. The exceptional attributes of NbAs2 driven by its remarkably high carrier mobility and compensated electron‐hole concentration near the Fermi level are revealed by band structure analysis based on theoretical calculations and quantum oscillations. This work not only underscores the immense potential of topological semimetals as transverse thermoelectric materials for niche applications where magnetic fields exist but also provides valuable guidance for the discovery and optimization of topological materials for promising thermoelectric performance.

Benchmark Investigation of SCC-DFTB against Standard and Hybrid DFT to Model Electronic Properties in Two-Dimensional MOFs for Thermoelectric Applications.

Recent studies have shown that metal-organic frameworks (MOFs) have potential as thermoelectric materials, and the topic has received increasing attention. The main motivation for this project is to further our knowledge of thermoelectric properties in MOFs and find which available self-consistent-charge density functional tight binding (SCC-DFTB) method can best predict (at least trends in) the electronic properties of MOFs at a lower computational cost than standard density functional theory (DFT). In this work, the electronic properties of monolayer, serrated, AA-stacked, and/or AB-stacked Zn3C6O6, Cd3C6O6, Zn-NH-MOF─for which no previous calculations of thermoelectric performance exist─and Ni3(HITP)2 MOFs are modeled with DFT-PBE, DFT-HSE06, GFN1-xTB, GFN2-xTB, and DFTB-3ob/mio. The band structures, density of states, and their relative orbital contributions, as well as the electrical conductivity, Seebeck coefficient, and power factor, are compared across methods and geometries. Our results suggest that GFN-xTB is adequate to predict the MOFs' band structure shape and density of states but not band gap. Our calculations further indicate that Zn3C6O6, Cd3C6O6, and Zn-NH-MOF have higher power factor values than Ni3(HITP)2, one of the highest performing synthesized MOFs, and are therefore promising for thermoelectric applications.

Enhanced thermoelectric performance of Cu2Se thin film derived from potential barrier scattering by incorporating SnSe nano-dispersions

Incorporating nano-dispersions into thermoelectric (TE) materials is an effective approach to enhance the TE properties. Herein, the TE performance of Cu2Se thin film is significantly enhanced by incorporating highly dispersed SnSe nano-inclusions. The high power factor (PF, ∼11.0 μW cm−1 K−2, 310 K) at near room temperature is achieved mainly due to the enhanced energy filtering effect that originated from the potential barrier difference. The total thermal conductivity is decreased owing to the simultaneously reduced electrical conductivity and enhanced phonon scattering. As a result, a high zT value (∼0.59 at 375 K) is achieved, which is about 12 times of pristine Cu2Se film. Remarkably, the calculated average zT values of Cu2Se/SnSe films from 310 to 375 K greatly exceed those of the pristine Cu2Se film, as well as the most state-of-the-art studies. High room-temperature PF and average zT value are crucial for expanding the practical application of Cu2Se at near room temperature. This work provides a feasible strategy to optimize the zT values of some other TE films by introducing nano-dispersions.

Enhancing Bi2Te2.70Se0.30 Thermoelectric Module Performance through COMSOL Simulations

This research employs the COMSOL Multiphysics software (COMSOL 6.2) to conduct rigorous simulations and assess the performance of a thermoelectric module (TEM) meticulously crafted with alumina (Al2O3), copper (Cu), and Bi2Te2.70Se0.30 thermoelectric (TE) materials. The specific focus is on evaluating diverse aspects of the Bi2Te2.70Se0.30 thermoelectric generator (TEG). The TEM design incorporates Bi2Te2.70Se0.30 for TE legs of the p- and n-type positioned among the Cu layers, Cu as the electrical conductor, and Al2O3 serving as an electrical insulator between the top and bottom layers. A thorough investigation is conducted into critical parameters within the TEM, which include arc length, electric potential, normalized current density, temperature gradient, total heat source, and total net energy rate. The geometric configuration of the square-shaped Bi2Te2.70Se0.30 TEM, measuring 1 mm × 1 mm × 2.5 mm with a 0.25 mm Al2O3 thickness and a 0.125 mm Cu thickness, is scrutinized. This study delves into the transport phenomena of TE devices, exploring the impacts of the Seebeck coefficient (S), thermal conductivity (k), and electrical conductivity (σ) on the temperature differential across the leg geometry. Modeling studies underscore the substantial influence of S = ±2.41 × 10−3 V/K, revealing improved thermal conductivity and decreased electrical conductivity at lower temperatures. The findings highlight the Bi2Te2.70Se0.30 TEM’s high potential for TEG applications, offering valuable insights into design and performance considerations crucial for advancing TE technology.

Engineering Symmetry Breaking in Twisted MoS2-MoSe2 Heterostructures for Optimal Thermoelectric Performance.

Engineering symmetry breaking in thermoelectric materials holds promise for achieving an optimal thermoelectric efficiency. van der Waals (vdW) layered transition metal dichalcogenides (TMDCs) provide critical opportunities for manipulating the intrinsic symmetry through in-plane symmetry breaking interlayer twists and out-of-plane symmetry breaking heterostructures. Herein, the symmetry-dependent thermoelectric properties of MoS2 and MoSe2 obtained via first-principles calculations are reported, yielding an advanced ZT of 2.96 at 700 K. The underlying mechanisms reveal that the in-plane symmetry breaking results in a lowest thermal conductivity of 1.96 W·m-1·K-1. Additionally, the electric properties can be significantly modulated through band flattening and bandgap alteration, stemming directly from the modified interlayer electronic coupling strength owing to spatial repulsion effects. In addition, out-of-plane symmetry breaking induces band splitting, leading to a decrease in the degeneracy and complex band structures. Consequently, the power factor experiences a notable enhancement from ∼1.32 to 1.71 × 10-2 W·m-1·K-2, which is attributed to the intricate spatial configuration of charge densities and the resulting intensified intralayer electronic coupling. Upon simultaneous implementation of in-plane and out-of-plane symmetry breaking, the TMDCs exhibit an indirect bandgap to direct bandgap transition compared to the pristine structure. This work demonstrates an avenue for optimizing thermoelectric performance of TMDCs through the implementation of symmetry breaking.

Engineering Carbon Nanotube Yarns with Polyaniline Coating toward Enhanced Thermoelectric Performance.

The growing demand for wearable electronics has driven the development of flexible thermoelectric (TE) generators which can harvest waste body heat as a renewable power source. Despite carbon nanotube (CNT) yarns have attracted significant attention as a promising candidate for TE materials, challenges still exist in improving their TE efficiency for commercial applications. Herein, we developed high performance CNT/polyaniline (PANI) yarns by engineering the coating of polyaniline emeraldine base (PANIeb), in which CNT yarns were firstly coated by PANIeb layer and further doped by HCl vapor treatment. With the incorporation of PANIeb, σ and S were simultaneously increased to 1796 S cm-1 and 74.8 μV K-1 for CNT/PANIeb 4-2d fibers, respectively. Further HCl vapor treatment induced greatly increased σ to 3194 S cm-1, but maintained be 83 % value before doping, giving rise to the highest power factor of 1224 μW m-1K-2, higher than pristine CNT yarns of 576 μW m-1K-2. Combining outstanding high TE performance and bending durability, a flexible TE generator was constructed to deliver high out power of 187 nW with temperature gradients of about 30 K. These results demonstrate the potential promise of high-performance CNT/PANI-HCl yarns to harvest waste body heat for sustainable power supply.

Interfacial Reactions between Sn-Based Solders and n-Type Bi2(Te,Se)3 Thermoelectric Material.

This study investigated the interfacial reactions between n-type Bi2(Te,Se)3 thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi2(Te,Se)3 reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)2Te3. Solid-state Sn/Bi2(Te,Se)3 reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi2(Te,Se)3, compared to the reactions with (Bi,Sb)2Te3, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi2(Te,Se)3 with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase.

Large thermoelectric transport in magnetically coupled CrI3/1T-MoS2 vdW heterostructure via spin–charge interconversion

Low-dimensional materials with prominent thermoelectric (TE) effect play a pivotal role in realizing state-of-the-art nanoscale TE devices. The fusion of TE effect with the magnetism through seamless integration of TE and magnetic materials in the 2D limit offers access to control longitudinal as well as transverse TE properties via magnetic proximity effect. Herein, we design a van der Waals (vdW) heterostructure of metallic 1T-MoS2 with promising TE properties and a layer-dependent magnetic CrI3 material. The result highlights exotic electronic and magnetic configurations of the designed monolayer-CrI3/1T-MoS2 vdW heterostructure, which show magnetically-coupled TE characteristics. The observed remarkable magnetic proximity stems from large magnetic anisotropy energy and spin polarization, which are found to be 2.21 meV Cr−1 and 12.30%, respectively. To this end, the semiconducting CrI3 layer with intrinsic magnetism leads to efficient control and tunability of the observed spin-correlated anomalous Nernst effect. Moreover, a large dimensionless figure of merit of ∼6 and a power factor of ∼3.8×1011/τ∘ Wm−1K−2s−1 near the Fermi level at 300 K endorse the rejuvenated TE effect. The strong relativistic spin–orbit coupling validates the significant correlation of TE properties with intrinsic magnetic configuration. The present study underscores the significance of the magnetic proximity-governed TE effect in vdW heterostructures to engineer low-dimensional TE devices.

Chiral photothermoelectric effect driven by high-Q quasi-bound states in the continuum

Bound states in continuum (BIC) have been proposed as a means to efficiently improve light-matter interactions in metasurfaces. While breaking the mirror symmetry of structure and developing BIC into a reachable and observable quasi-BIC, it is usually accompanied by the chiral phenomenon with high quality (Q) factor. Here, we report a spin-sensitive photodetector in the infrared (NIR) region comprising a silicon metasurface with chiral quasi-BIC, a silver layer, and a thermoelectric layer. A chiral quasi-BIC supported by a silicon metasurface can be realized under normal incidence. Based on finite element method simulations, a silicon metasurface with a silver layer shows a high Q-factor of 958.6 with a giant absorption circular dichroism of 0.83. Subsequently, we study the thermal performance of the chiral absorbers by using the heat transfer module of COMSOL. Combined with the thermoelectric material bismuth telluride, we calculate the differential photothermoelectric effects of the system under circular-polarized light irradiation. When the incident flux is 100 W cm−2, the output voltage under right-circular-polarization (left-circular-polarization) light reaches 0.59 mV (0.08 mV), which can be used for polarization detection. Therefore, our designed structure incorporating thermoelectricity broadens the applications of chiral BIC in sensors and detectors.

High cooling and power generation performance of α-MgAgSb with intrinsic low lattice thermal conductivity

α-MgAgSb is a promising near-room temperature thermoelectric material, characterized by its intrinsically low lattice thermal conductivity, a feature attributed to the significant atomic mass contrast and complex crystal structure. In this work, we achieved respective zTavg values of 0.58 in the temperature range of 150-300 K and 1.22 in the range of 300-550 K for α-MgAgSb, indicating exceptional potential for both cooling and power generation applications. Additionally, through the reduction of cross-sectional size, the stability of MgAgSb/Ag interface was enhanced under high temperature, which is crucial for the practical application of thermoelectric module. To verify the property of α-MgAgSb material, a 7-pair MgAgSb/Bi2Te3 module was fabricated, demonstrating a maximum cooling temperature difference ΔTmax of 60 K at hot-side temperature of 300 K and a power generation efficiency ηmax of 7.2% with ΔT of 275 K. This work paves the way for the application of Mg-based thermoelectric materials.

Enhanced thermoelectric performance of W18O49/ZnO composite for waste heat recovery with induced high weighted mobility

Zinc Oxide (ZnO) exhibits a significant Seebeck coefficient, making it a promising candidate for thermoelectric energy harvesting. This study explores composite materials comprising xW18O49/(1-x)ZnO fabricated through conventional sintering at 1150°C, with x varying from 0 to 0.3. Incorporating a highly conductive secondary phase into the ZnO matrix enhances conductivity by 28 times, reaching 111.4 Scm-1 at 800°C, while maintaining 83% of the pristine sample's Seebeck coefficient. Notably, the power factor improves to 3.8 mWK-2m-1 for the x = 0.1 sample, representing a 19 times heightening over unmodified ZnO ceramic. Additionally, these composites exhibit high weight mobility, indicating rapid electronic responses. As a result, the ZT value increases by 500%, reaching 0.15 at 800°C for the x = 1 sample. This study presents a novel approach to fabricating high-power-factor thermoelectric materials by integrating highly conductive oxides into matrices with large Seebeck coefficients.